新型大动态范围增强极选择性带通滤波器

A. Barua
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引用次数: 1

摘要

提出了一种可在MOSFET-C拓扑结构中实现的高极选择性(Q/sub p/)带通滤波器。运算放大器采用全平衡拓扑结构,具有良好的电源抑制噪声性能。该滤波器除具有宽动态范围外,还具有低运放数。将该电路与传统的增强极选择性带通滤波器进行了比较。用SPICE软件对电路进行了仿真,在Q/sub p/值为60时,得到了123.39 dB的动态范围。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Novel enhanced pole selectivity bandpass filter with large dynamic range
A high pole selectivity (Q/sub p/) bandpass filter realizable in MOSFET-C topology is suggested. The op-amps are used in fully balanced topology which has good power supply noise rejection. The proposed filter has low op-amp count in addition to a wide dynamic range. The circuit has been compared with conventional enhanced pole selectivity bandpass filter. The circuit is simulated by SPICE and a dynamic range of 123.39 dB is obtained for Q/sub p/ value of 60.
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