SbTeI的合成及电性能研究

H. Dubey, L. Deshmukh, D. Kshirsagar, M. Sharon, M. Sharon
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引用次数: 5

摘要

采用固相反应法制备针状SbTeI晶体。在4 ~ 550 K的温度范围内测量电阻。SbTeI在4k ~ 300k范围内表现为金属性质,在较高温度(> 300k)范围内表现为半导体性质。与SbSI不同,该材料在550 K左右显示几乎为零电阻。该材料具有717 pF的压电特性,载流子密度为2.12 × 1016 cm−3,载流子高贵度为1.01 cm2/(V·s)。采用XRD、SEM和拉曼分析对SbTeI晶体进行了表征。电活化能为0.52 eV。建议研究该材料作为Tc高于室温的超导体的应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Synthesis and Study of Electrical Properties of SbTeI
Needle shaped SbTeI crystals were obtained by solid state reaction. Electrical resistance was measured in the temperature range of 4 K to 550 K. SbTeI shows a metallic behavior from 4 K to 300 K, and at higher temperature (>300 K), it shows semiconducting behavior. Unlike SbSI, this material shows almost zero resistance around 550 K. It shows a piezoelectric behavior with a capacitance of 717 pF and its carrier density and nobilities are found to be 2.12 × 1016 cm−3 and 1.01 cm2/(V·s), respectively. Crystals of SbTeI are characterized by XRD, SEM, and Raman analysis. Electrical activation energy is found to be 0.52 eV. It is suggested that this material may be studied for its application as a superconductor with Tc higher than room temperature.
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