三氧化钼薄膜电性能与衬底温度的关系

B. A. Samad, Christine Duguay
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引用次数: 0

摘要

采用热蒸发技术在不同温度下在玻璃衬底上沉积了三氧化钼薄膜。研究了其电性能随温度和紫外线照射的变化规律。衬底温度似乎会影响沉积薄膜的电学性能。电阻率随衬底温度的降低而降低。系统研究了不同底物温度下紫外辐照对样品的影响。所有样品均暴露于紫外线照射下1小时。通过将样品暴露在紫外线照射下,发现电阻率随时间的变化而降低。建立了紫外辐照与MoO3薄膜衬底温度之间的相关性。从应用的角度来看,衬底温度的依赖性很重要,我们可以根据需要的应用来控制MoO3薄膜的电阻率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The dependence of electrical properties of Molybdenum Trioxide Thin Films on substrate temperature
Thin films of molybdenum trioxide (MoO3) were deposited by thermal evaporation technique on to a glass substrate at different temperatures. The variation of electrical property with temperature as well as with UV irradiation was studied. The substrate temperature seems to affect the electrical property of the deposited films. The electrical resistivity decreases as the substrate temperature decrease. The effect of UV irradiation on samples were systematically investigated with different substrate temperature. All samples were exposed to UV irradiation for one hour. By exposing samples to UV irradiation, electrical resistivity was found to decrease as a function of time. A correlation is established between, UV irradiation, and the substrate temperature of the MoO3 films. This dependence of the substrate temperature is important in the point of view of applications, where the we can control the resistivity of the MoO3 film depending on the application needed.
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