抗溶剂处理及Cs取代FA对CsXFA1-XPbI3自旋镀膜性能的影响

G. Gordillo, L. Herrera, C. Otálora, C. Calderón, C. Quiñones
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引用次数: 0

摘要

本文报道了抗溶剂处理对CsXFA1-XPbI3自旋镀膜膜形貌的影响,以及铯离子(Cs)取代甲脒离子(FA)对CsXFA1-XPbI3膜稳定性和性能的影响。当少于25%的FA被Cs取代时,这种取代发生有效。研究了FA/Cs比和抗溶剂处理对CsXMA1-XPbI3薄膜光学、结构和形貌的影响,并通过光谱透射率、x射线衍射(XRD)和扫描电镜(SEM)测量研究了FA/Cs比和抗溶剂处理对CsXMA1-XPbI3薄膜光学、结构和形貌的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Impact of antisolvent treatment and of the substitution of the ion FA by the ion Cs on the properties of CsXFA1-XPbI3 films prepared by spin coating
This work reports results concerning the effect that antisolvent treatment causes on the morphology of CsXFA1XPbI3 films synthesized by spin coating as well as the impact that the substitution of the ion Formamidinium (FA) by the ion cesium (Cs) causes both on the stability and on the properties of the CsXFA1-XPbI3 films. This substitution occurs effectively when less than 25% of FA are replaced by Cs. The influence of both FA/Cs ratio and antisolvent treatment on the optical, structural and morphological properties of CsXMA1-XPbI3 films, where also studied through spectral transmittance, X-ray diffraction (XRD) and Scanning Electron Microscopy (SEM) measurements.
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