预测了在高强度和高温度下近乎优化设计的磷化铟空间太阳能电池的性能

Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference Pub Date : 1988-01-01 DOI:10.1109/PVSC.1988.105792

C. Goradia, W. Thesling, M. Ghalla-Goradia, I. Weinberg, C. K. Swartz

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引用次数: 4

摘要

作者计算的预期性能依赖算法设计浅同质结n /一口+ / pp /一口+ /可使太阳能电池200 AMO事件强度和温度高达100摄氏度(373 K),圆形和矩形细胞被认为是,前者用于Cassegrainian集中器阵列AM0 100号80 - 100摄氏度,后者用于20 AM0板条集中器阵列,80 - 100度C与效率接近22%在80摄氏度,圆形和矩形InP浅同结太阳能电池与相同设计的GaAs电池相比都非常有利，并且由于InP电池具有优越的辐射耐受性，因此可能比GaAs电池更适合用于空间应用。

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Predicted performance of near-optimally designed indium phosphide space solar cells at high intensities and temperatures

The authors calculated the expected performance dependence of near-optimally designed shallow homojunction n/sup +/pp/sup +/ InP solar cells on incident intensities up to 200 AMO and temperatures up to 100 degrees C (373 K). Both circular and rectangular cells were considered, the former for use in a Cassegrainian concentrator array at 100 AM0, 80-100 degrees C and the latter for use in a Slats concentrator array at 20 AM0, 80-100 degrees C. With efficiencies near 22% at 80 degrees C, both the circular and rectangular InP shallow homojunction solar cells compare very favorably to GaAs cells of the same design and may be preferable to the GaAs cells for space applications because of the superior radiation tolerance of the InP cells.<>

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来源期刊

Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference

CiteScore

1.40

自引率

0.00%

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