共振光泵浦下Si:P和Si:Bi的受激太赫兹辐射

Twenty Seventh International Conference on Infrared and Millimeter Waves Pub Date : 2002-12-16 DOI:10.1109/ICIMW.2002.1076189

J. Hovenier, T. Klaassen, R. Zhukavin, D. M. Gaponova, A. Muravjov, E. Orlova, V. Shastin, S. Pavlov, H. Hubers, H. Riemann, A. V. D. van der Meer

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引用次数: 0

摘要

利用自由电子激光FELIX的频率可调辐射，激发了嵌在块状单晶硅中的中性磷和铋供体。在奇宇称杂质态的共振泵浦下，在液氦温度下观察到太赫兹频率的激光。

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Stimulated THz emission from Si:P and Si:Bi under resonant intracenter optical pumping

Frequency tunable radiation from the free electron laser FELIX was used to excite neutral phosphorus and bismuth donors embedded in bulk monocrystalline silicon. Lasing at terahertz frequencies has been observed at liquid helium temperature under resonant pumping of odd parity impurity states.

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Twenty Seventh International Conference on Infrared and Millimeter Waves

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