存在边缘缺陷时六方晶格拓扑绝缘体中狄拉克电子的自旋输运

2020 IEEE Region 10 Symposium (TENSYMP) Pub Date : 2020-06-05 DOI:10.1109/TENSYMP50017.2020.9231022

Anowarul Azim, Beig Rajibul Hasan, Nishat Mahzabin Helaly, Tanvir Ahmed, Mahbub Alam

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引用次数: 0

摘要

二维拓扑绝缘子具有拓扑保护的自旋边缘态输运的独特性质。本文利用非平衡格林函数(Non - equilibrium greens function, NEGF)的形式，对二维六边形晶格纳米带ti的随机边缘缺陷进行了详细的研究。Haldane模型被用于在器件哈密顿量中加入自旋轨道相互作用，这是在这些材料中创建拓扑保护边缘态的来源。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Spin Transport Of Dirac Electrons In Hexagonal Lattice Topological Insulator In The Presence Of Edge Imperfections

2D Topological insulators (TIs) possess an unique property of transport of spin edge states which are topologically protected. This phenomenon is explored in details in this paper for random edge imperfections in 2D hexagonal lattice nanoribbon TIs using Non equilibrium greens function (NEGF) formalism. Haldane model has been used for incorporating spin orbit interaction in the device hamiltonian, which is the source of creating topologically protected edge states in these materials.

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2020 IEEE Region 10 Symposium (TENSYMP)

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