激光直写光刻制备大面积超导微线单光子探测器

2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz) Pub Date : 2021-08-29 DOI:10.1109/IRMMW-THz50926.2021.9567473

Shuchao Yang, Tao Xu, Han Bao, X. Jia, La-bao Zhang, L. Kang, Jian Chen, Peiheng Wu

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引用次数: 0

摘要

采用磁控溅射法制备了MoSi薄膜。5nm薄膜的零电阻超导转变温度达到4.1 K。然后，通过优化光刻工艺条件，采用激光直写光刻技术制备微米线。检测区域的线宽为1.0 μm ~ 2.0 μm，该微线在大面积内具有较高的均匀性，最大光敏面积可达1000×1000 μm2。我们初步表征了探测器的性能，包括I-V特性、暗计数和光子计数率。

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Large-area Superconducting Micro-wire Single-photon Detectors Prepared by Laser Direct Writing Lithography

We have fabricated MoSi thin films by magnetron sputtering. The zero resistance superconducting transition temperature of 5 nm thin films reaches 4.1 K. Then, by optimizing lithography conditions, micron lines were prepared by laser direct writing lithography. The line width is from1.0 μm to 2.0 μm of the detection region, which the micro-wires have high uniformity in a large area, and the largest photosensitive area is up to 1000×1000 μm2. we preliminarily characterize the performance of the detectors, including I-V characteristics, dark counts, and photon counts rate.

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2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz)

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