InP表面处理的光谱光致发光和拉曼研究

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147437

B. Bollig, R. Iyer, D. Lile

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引用次数: 0

摘要

利用光致发光(PL)和拉曼光谱测量了不同化学和热处理对InP表面性能的影响。根据拉曼光谱，计算表面电位和耗尽宽度的值，从而可以从PL数据中提取表面复合速度的值。PL数据明确证实了未保护的InP表面在温度超过200℃时的降解。

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Spectral photoluminescence and Raman investigations of surface treatments on InP

Results of photoluminescence (PL) and Raman spectroscopy measurements on the effects of different chemical and thermal treatments on the surface properties of InP are presented. From the Raman spectra, values of the surface potential and depletion width are calculated, which allow values of surface recombination velocity to be extracted from the PL data. The PL data provide unambiguous confirmation of the degradation of the unprotected InP surface at temperatures over 200 degrees C.<>

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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