{"title":"高速开关元件的发展","authors":"A. Lo","doi":"10.1109/JRPROC.1962.288007","DOIUrl":null,"url":null,"abstract":"Recent developments in high-speed switching elements are outlined to indicate the trend of recent work and thoughts on physical implementation of high-speed digital data processing systems. Four outstanding switching elements, thin film cryotron, high-speed transistor, microwave parametric phase-locked oscillator, and tunnel diode, as well as some related circuit and fabrication techniques, are briefly described and commented on. The transistor remains as the predominant switching element for these systems, largely because of the vast experience with it. The other technologies are presenting an ever increasing challenge to the transistor in this area.","PeriodicalId":20574,"journal":{"name":"Proceedings of the IRE","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1962-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Development in High-Speed Switching Elements\",\"authors\":\"A. Lo\",\"doi\":\"10.1109/JRPROC.1962.288007\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Recent developments in high-speed switching elements are outlined to indicate the trend of recent work and thoughts on physical implementation of high-speed digital data processing systems. Four outstanding switching elements, thin film cryotron, high-speed transistor, microwave parametric phase-locked oscillator, and tunnel diode, as well as some related circuit and fabrication techniques, are briefly described and commented on. The transistor remains as the predominant switching element for these systems, largely because of the vast experience with it. The other technologies are presenting an ever increasing challenge to the transistor in this area.\",\"PeriodicalId\":20574,\"journal\":{\"name\":\"Proceedings of the IRE\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1962-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IRE\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/JRPROC.1962.288007\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IRE","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/JRPROC.1962.288007","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Recent developments in high-speed switching elements are outlined to indicate the trend of recent work and thoughts on physical implementation of high-speed digital data processing systems. Four outstanding switching elements, thin film cryotron, high-speed transistor, microwave parametric phase-locked oscillator, and tunnel diode, as well as some related circuit and fabrication techniques, are briefly described and commented on. The transistor remains as the predominant switching element for these systems, largely because of the vast experience with it. The other technologies are presenting an ever increasing challenge to the transistor in this area.
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