G. Verzellesi, R. Pierobon, F. Rampazzo, G. Meneghesso, A. Chini, U. Mishra, C. Canali, E. Zanoni
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Experimental/numerical investigation on current collapse in AlGaN/GaN HEMT's
Rf current collapse is investigated in AlGaN/GaN HEMT's by means of pulsed, transient, and small-signal measurements. Numerical device simulations are presented, showing that the concomitant presence, at the ungated device surface, of polarization-induced charges and hole traps can explain, without invoking any other hypothesis, all dispersion effects observed experimentally.
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