Ni2+掺杂CsCdCl3激光诱导透射率修饰的观察

PhysChemComm Pub Date : 1999-01-01 DOI:10.1039/A907907F
U. Oetliker, C. Reber
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引用次数: 1

摘要

在Ni2+离子掺杂的CsCdCl3中,窄3A2→1A1 (O点群对称近似)晶体场跃迁的吸光度可以受到先前报道的激光调谐到强激发态跃迁的影响。激光脉冲在701.7 nm处与1A1和3T2态耦合的强1A1↔3T2间激发态跃迁发生共振时,525.2 nm处最大带的强度降至接近零。失谐耦合激光波长大大减少了这种影响,从而证实了这种特殊的激发态间跃迁对控制从电子基态的常规跃迁的重要性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Observation of a laser-induced transmittance modification in Ni2+ doped CsCdCl3
The absorbance of the narrow 3A2 → 1A1 (O point group symmetry approximation) crystal-field transition in CsCdCl3 doped with Ni2+ ions can be influenced by a laser tuned to a strong inter-excited state transition reported earlier for this material. The intensity of the band maximum at 525.2 nm decreases to nearly zero for the duration of a laser pulse in resonance with the intense 1A1 ↔ 3T2 inter-excited state transition at 701.7 nm which couples the 1A1 and 3T2 states. Detuning the coupling laser wavelength reduces the effect considerably and thus confirms the importance of this particular inter-excited state transition for the control of a conventional transition from the electronic ground state.
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