强太赫兹脉冲串对Ge-Sb-Te相变材料的损伤及微斑形成

Kotaro Makino, Kosaku Kato, K. Takano, Y. Saito, J. Tominaga, T. Nakano, Goro Isoyarna, M. Nakajima
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引用次数: 0

摘要

强太赫兹辐射在物质控制方面具有广阔的前景,了解太赫兹与物质的相互作用是重要的研究课题。我们用自由电子激光的太赫兹脉冲序列照射Ge-Sb- Te相变材料薄膜,发现作为烧蚀前兆的表面变化和波动被诱导而没有非晶化。这种波动模式被认为是激光诱导周期结构(LIPSS)的一种,是激光材料加工领域的重要现象之一。没有非晶化意味着光或电激励在快速相变操作中起着重要作用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Damage and Micropattem Formation in Ge-Sb-Te Phase Change Materials Induced by Intense Terahertz Pulse Train
Intense terahertz radiation is promising for material control and understanding of the THz-matter interactions is important research topic. We irradiated Ge-Sb- Te phase change material thin films with a train of THz pulses from a free electron laser and found that the surface changes that are damage as a precursor to ablation and the undulations were induced without amorphization. The undulation pattern is thought to be a sort of laser induced periodic structure (LIPSS) that is one of important phenomena in the field of laser material processing. Absence of amorphization implies that photo- or electrical-excitation plays an important role for fast phase change operation.
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