具有GaAsSb/GaAs量子阱的高性能1.3-/spl mu/m vcsel

LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242) Pub Date : 2001-11-12 DOI:10.1109/LEOS.2001.968957

M. Yamada, T. Anan, K. Kurihara, K. Nishi, K. Tokutome, A. Kamer, S. Sugou

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引用次数: 2

摘要

我们已经证明了波长大于1.27 /spl mu/m的GaAsSb/GaAs VCSELs的连续波和高速性能。在1.1 mA的阈值下实现了1.295 /spl mu/m的激光输出。在1.27 /spl mu/m下获得单模输出0.46 mW和4.5 ghz带宽。因此，GaAsSb/GaAs vcsel应该是高容量光纤系统可行的低成本光源。

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High-performance 1.3-/spl mu/m VCSELs with GaAsSb/GaAs quantum wells

We have demonstrated CW and high-speed performance of GaAsSb/GaAs VCSELs lasing at a wavelength of longer than 1.27 /spl mu/m. 1.295 /spl mu/m lasing was achieved with a threshold of 1.1 mA. Single-mode output of 0.46 mW, and 4.5-GHz bandwidth was obtained at 1.27 /spl mu/m. Thus, GaAsSb/GaAs VCSELs should be viable low-cost light sources for high-capacity optical fiber systems.

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LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)

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