掺铁ZnS薄膜的性能

Jafarli Rufat
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引用次数: 1

摘要

采用化学浴沉积法(CBD)在砷化镓(GaAs)衬底上成功制备了铁掺杂ZnS单相铁磁性薄膜。随场和温度变化的磁化曲线表明,样品的居里温度Tc高达270K。x射线衍射和原子力显微镜(AFM)分析表明,薄膜结晶良好,Fe离子取代了ZnS基体中的Zn离子,未发现二次相和铁团簇的痕迹。用广义梯度近似(GGA)中的自旋极化密度泛函理论解释了实验结果,表明观察到的高Tc可能主要归因于Fe离子与宿主元素之间的p-d交换耦合。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Properties in Fe-Doped ZnS Thin Films
Fe-doped ZnS single-phase thin films showing ferromagnetism have been successfully prepared by Chemical Bath deposition (CBD) on GaAs substrates. Field and temperature dependent magnetization curve indicate that the sample with a Curie temperature Tc as high as 270K. The X-ray diffraction and Atomic Force Microscopy (AFM) reveal that the thin films are well crystallized, Fe ions are substituted for Zn ions in the ZnS matrix and no trace of secondary phases or Fe clusters is detected. The experimental results are explained theoretically by spin-polarized density functional calculations within Generalized-Gradient Approximations (GGA), which indicates the observed high Tc could be mainly ascribed to the p-d exchange coupling between Fe ions and host elements.
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