直流电流下非对称双栅栅高电子迁移率晶体管等离子体光混合器的太赫兹发射

Tomotaka Hosotan, A. Satou, T. Otsuji
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引用次数: 0

摘要

本文报道了由光混合双cw -红外激光照射激发的电流驱动的非对称双栅极高电子迁移率晶体管(adg - hemt)的太赫兹(THz)发射,其差频$(\ δ f)$设置在通道中二维电子的太赫兹等离子体模式频率附近。在100 K下观测到的辐射光谱显示出两种不同的黑体辐射发射成分,一种是由$\ δ f$独立的热激发非相干等离子体激元促进的,另一种是由$\ δ f$依赖的相干等离子体激元促进的。结果表明,在直流电流的刺激下,等离子体发生了不稳定性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Terahertz Emission in an Asymmetric Dual-Grating-Gate High-Electron Mobility Transistor Plasmonic Photomixer under dc Current Flow
We report on terahertz (THz) emission from a current-driven asymmetric dual-grating-gate high-electron-mobility transistor (ADGG-HEMT) excited by photomixed dual-CW-infrared laser irradiation whose difference frequency $(\delta f)$ was set around the THz plasmon-mode frequencies of the 2D electrons in the channel. The radiation spectra observed at 100 K showed two distinctive emission components beyond the black-body radiation, one promoted by $\delta f$ independent thermally excited incoherent plasmons and the other promoted by $\delta f$ dependent coherent plasmons. The results suggest the occurrence of the plasmonic instability stimulated by the dc current flow in the channel.
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