利用光电二极管产生太赫兹的低光偏振依赖的纳米结构顶部接触

2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) Pub Date : 2018-09-01 DOI:10.1109/IRMMW-THZ.2018.8510466

S. Bretin, M. Billet, E. Peytavit, F. Vaurette, C. Coinon, X. Wallart, J. Lampin, M. Zegaoui, G. Ducournau, M. Zaknoune

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引用次数: 0

摘要

针对降低光偏振灵敏度的问题，提出了采用不同顶光电通道的单行载流子光电二极管(ut - pd)。通过优化的结构，在确保良好的射频接入的同时，光偏振仅依赖于1%。在- 1V偏置和25.3 mW光功率下提供高达110 GHz的测量值。

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Nano-structured top contact with low optical polarization dependence for THz generation using photodiodes

Uni-travelling carrier photodiode (UTC-PD) with different top optical and electrical accesses are proposed towards optical polarization sensitivity reduction. With the optimized structure, only 1 percent dependence in optical polarization is obtained while ensuring good RF access. Measurements up to 110 GHz are presented at −1V bias and 25.3 mW optical power.

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2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)

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