基于半导体量子点的新型红外探测器

Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004. Pub Date : 2004-01-01 DOI:10.1109/ICIMW.2004.1422042

Zhonghui Chen, Eui-Tae Kim, Zhengmao Ye, J. Campbell, A. Madhukar

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摘要

本文综述了近年来基于自组装InAs/GaAs量子点的红外探测器的研究进展，特别是n-i(QDs)-n结构红外探测器的研究进展。这些重大进展预示着qdip在中红外成像领域的应用有望实现。

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Novel infrared detectors based on semiconductor quantum dots

This paper reviews recent progresses in developing self-assembled InAs/GaAs quantum dots based infrared photodetectors, especially, with n-i(QDs)-n configuration. These significant progresses indicate a realistic hope that QDIPs can be exploited for mid-infrared imaging application.

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来源期刊

Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004.

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