预测错配应力对异质结构p-n结I-V特性影响的方法

E. Pankratov
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引用次数: 0

摘要

我们考虑了一个非线性模型来分析p-n结的电流-电压特性,它是由扩散或离子注入在具有特定构型的异质结构框架中制造的。我们对模型进行了分析,以获得所考虑的电流-电压特性与异质结构框架中错配引起的应力的依赖关系。我们还考虑了一种分析过程中质量和热量传递的解析方法,考虑了它们的非线性和错配引起的应力以及它们的参数在空间和时间上的变化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
On Approach for Prognosis of Influence of Mismatch-induced Stresses on the I–V Characteristics of p-n-junctions Manufactured in a Heterostructure
We consider a nonlinear model for analysis of current-voltage characteristic of a p-n-junction, which was manufactured in the framework of a heterostructure with specific configuration by diffusion or ion implantation. We analyzed the model to obtain dependence of the considered current-voltage characteristic on missmatch-induced stresses in the framework of the heterostructure. We also consider an analytical approach for analysis of mass and heat transport during the considered processes with account their nonlinearity and missmatch induced stresses as well changes of parameters of these in space and time.
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