epsilon -近零衬底上MoS2单层自发发射增强

Frontiers in optics. Annual Meeting of the Optical Society of America Pub Date : 2020-09-14 DOI:10.1364/FIO.2020.FM1B.2

A. Anopchenko, Khant Minn, Ching-Wen Chang, Jinmin Kim, Yu-Jung Lu, S. Gwo, H. W. Lee

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引用次数: 0

摘要

本文研究了分子束外延法生长的氧化铝涂层TiN薄膜上二硫化钼单层的光致发光增强。这种增强是由于在与TiN的epsilon-近零波长相等的激发波长处光吸收增加。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Enhanced Spontaneous Emission of MoS2 Monolayers on Epsilon-Near-Zero Substrates

We study photoluminescence enhancement of MoS2 monolayers on alumina-coated thin TiN films grown by molecular-beam-epitaxy. The enhancement is due to increased light absorption at excitation wavelengths equal to epsilon-near-zero wavelength of TiN.

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Frontiers in optics. Annual Meeting of the Optical Society of America

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