高法拉第旋转薄膜在硅上生长钇铁石榴石的优化研究

A. Block, B. Stadler, J. Stoltz, N. Seaton
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引用次数: 1

摘要

在Si上获得了法拉第旋转为4000°/cm和10000°/cm的铋和铈YIG薄膜,并给出了获得这种薄膜所需的生长和结晶的完整模型。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Optimized yttrium iron garnet growth on silicon for films with high faraday rotation
Bismuth and cerium YIG films with Faraday rotations of 4000°/cm and 10000°/cm were obtained on Si, and a complete model for the growth and crystallization required to obtain such films is presented.
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