分流抑制的电流模式实现

A. Moini, A. Bouzerdoum, K. Esbraghian
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引用次数: 9

摘要

在本文中,我们提出了一个电流模式的VLSI实现分流抑制。我们的方法使用在亚阈值区域工作的MOS晶体管的跨线性电路设计技术。与以前的实现相比,我们的设计实现了更大的动态范围,也清楚地表明了网络的时空响应对输入光平均强度的依赖。在2/spl μ m / CMOS工艺下,实现并制作了64单元SI电路的一维阵列。给出并讨论了该芯片的Hspice仿真结果和测试结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A current mode implementation of shunting inhibition
In this paper we present a current-mode VLSI implementation of shunting inhibition. Our approach uses translinear circuit design techniques using MOS transistors operating in the subthreshold region. Compared to previous implementations our design achieves a larger dynamic range and also clearly demonstrates the dependence of the spatio-temporal response of the network on the input light mean-intensity. A 64-cell one-dimensional array of the SI circuit has been implemented and fabricated in a 2/spl mu/ CMOS process. Hspice simulation results as well as test results obtained from the chip are presented and discussed.
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