MOS磁微传感器结构的噪声

C. Panait, G. Caruntu
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引用次数: 0

摘要

本文介绍了用MOS集成电路技术实现磁性微传感器结构的分析与优化的研究成果。通过用霍尔板吸收几乎恒定深度的MOSFET通道,将传统霍尔板的结果推广到mos霍尔板。在充分建立模型的基础上,建立了以电流偏转效应为主的双极横向磁敏晶体管的噪声主特性。因此,首次实现了对通道几何形状和材料特征方面的器件特性的分析。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The noise of MOS magnetic microsensors structures
The paper presents the results of research work regarding the analysis and optimization of magnetic microsensor structures realized in MOS integrated circuits technology. By assimilating the MOSFET channel of almost constant depth with a Hall plate, the results obtained for the conventional Hall plates have been extended to MOS-Hall plates. On the basis of adequate models there have been established the noise main characteristics for bipolar lateral magnetotransistor, where the current deflection effect is dominating. An analysis of the devices characteristics in respect with the channel geometry and the material features has therefore been achieved for the first time.
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