一个21.56dBm四路电流组合功率放大器，用于65纳米CMOS的ka波段应用

IEICE Electron. Express Pub Date : 2022-01-01 DOI:10.1587/elex.18.20210286

Zhiqiang Wang, Xin Liu, Zhiqiang Li, Xiaosong Wang, Minghua Wang, Quan Li, Yan Li, Yu Liu

{"title":"一个21.56dBm四路电流组合功率放大器，用于65纳米CMOS的ka波段应用","authors":"Zhiqiang Wang, Xin Liu, Zhiqiang Li, Xiaosong Wang, Minghua Wang, Quan Li, Yan Li, Yu Liu","doi":"10.1587/elex.18.20210286","DOIUrl":null,"url":null,"abstract":"This paper presents a four-way current-combining Ka-band power ampliﬁer(PA) in 65-nm CMOS technology. A symmetrical, transmission line based four-way current combiner, together with output transformers, is used to transfer the high load impedance(4* 𝑍 𝐿 ) to the desired 𝑍 𝑜𝑝𝑡 foreachpowerunitcell.Besides,bothinterstage/inputﬂexible matching transformers and the power splitter are optimized to improve the performance. Based on the methodology mentioned above, the power ampliﬁer demonstrates a small-signal gain of about 24.12 dB, a saturated output power of 21.56 dBm, and a peak power-added eﬃciency of 27.3% at 35GHz.","PeriodicalId":13437,"journal":{"name":"IEICE Electron. Express","volume":"1 1","pages":"20210286"},"PeriodicalIF":0.0000,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 21.56dBm four-way current-combining power amplifier for Ka-band applications in 65-nm CMOS\",\"authors\":\"Zhiqiang Wang, Xin Liu, Zhiqiang Li, Xiaosong Wang, Minghua Wang, Quan Li, Yan Li, Yu Liu\",\"doi\":\"10.1587/elex.18.20210286\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a four-way current-combining Ka-band power ampliﬁer(PA) in 65-nm CMOS technology. A symmetrical, transmission line based four-way current combiner, together with output transformers, is used to transfer the high load impedance(4* 𝑍 𝐿 ) to the desired 𝑍 𝑜𝑝𝑡 foreachpowerunitcell.Besides,bothinterstage/inputﬂexible matching transformers and the power splitter are optimized to improve the performance. Based on the methodology mentioned above, the power ampliﬁer demonstrates a small-signal gain of about 24.12 dB, a saturated output power of 21.56 dBm, and a peak power-added eﬃciency of 27.3% at 35GHz.\",\"PeriodicalId\":13437,\"journal\":{\"name\":\"IEICE Electron. Express\",\"volume\":\"1 1\",\"pages\":\"20210286\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEICE Electron. Express\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1587/elex.18.20210286\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEICE Electron. Express","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1587/elex.18.20210286","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

提出了一种基于65nm CMOS技术的四路电流组合ka波段功率放大器。一个对称的，传输线为基础的四路电流组合器，连同输出变压器，用于传输高负载阻抗(4*𝑍𝐿)到所需的𝑍𝑜𝑝𝑡foreachpowerunitcell。此外，对级间/输入柔性匹配变压器和功率分配器进行了优化，提高了性能。基于上述方法，该功率放大器在35GHz时的小信号增益约为24.12 dB，饱和输出功率为21.56 dBm，峰值功率增加效率为27.3%。

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A 21.56dBm four-way current-combining power amplifier for Ka-band applications in 65-nm CMOS

This paper presents a four-way current-combining Ka-band power ampliﬁer(PA) in 65-nm CMOS technology. A symmetrical, transmission line based four-way current combiner, together with output transformers, is used to transfer the high load impedance(4* 𝑍 𝐿 ) to the desired 𝑍 𝑜𝑝𝑡 foreachpowerunitcell.Besides,bothinterstage/inputﬂexible matching transformers and the power splitter are optimized to improve the performance. Based on the methodology mentioned above, the power ampliﬁer demonstrates a small-signal gain of about 24.12 dB, a saturated output power of 21.56 dBm, and a peak power-added eﬃciency of 27.3% at 35GHz.

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IEICE Electron. Express

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