衬底温度对近空间升华法制备CdS/DdTe/Te太阳能电池光伏参数的影响

T. Potlog, N. Spalatu
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引用次数: 1

摘要

采用近距离空间升华法制备薄膜CdS/CdTe太阳能电池,衬底温度为300℃~ 340℃。在衬底温度320℃和源温度610℃时获得了最佳的光伏参数。开路电压和电流密度随衬底温度显著变化,并依赖于衬底温度。开路电压和电流密度分别达到0.81 V和22.75 mA/cm2。获得了效率为9.56%的CdS/CdTe太阳能电池。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Influence of substrate temperature on photovoltaic parameters of CdS/DdTe/Te solar cells fabricated by Close Space Sublimation
Thin film CdS/CdTe solar cells were fabricated by close space sublimation at the substrate temperature ranging from 300degC plusmn 5degC to 340 plusmn 5degCdegC. The best photovoltaic parameters were achieved at substrate temperature 320degC and source temperature 610degC. The open circuit voltage and current density changes significantly with the substrate temperature and depends on the substrate temperature. The open circuit voltage and current density achieves 0, 81 V and 22, 75 mA/cm2, respectively. CdS/CdTe solar cells with an efficiency of 9, 56% were obtained.
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