二维半导体中太赫兹辐射的吸收

Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004. Pub Date : 2004-01-01 DOI:10.1109/ICIMW.2004.1422180

J. Cao

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引用次数: 0

摘要

从理论上研究了半导体异质结中太赫兹辐射的非线性自由载流子吸收，考虑了多光子过程和导价带间冲击电离(II)。我们已经确定了场和频率相关的吸收率。发现在低场和中场中电子无序散射是重要的，而高场吸收主要是II过程。

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Absorption of terahertz radiations in two-dimensional semiconductors

Nonlinear free-carrier absorption of terahertz radiations in semiconductor heterojunctions have theoretically been investigated by considering multiple photon process and conduction-valence interband impact ionisation (II). We have determined the field and frequency dependent absorption rate. It is found that electron-disorder scatterings are important at low to intermediate fields, and the high field absorption is dominated by II processes.

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Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004.

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