用于宽I/O数据总线应用的RF MEMS开关

M. Cohn, Kaosio Saechao, Michael Whitlock, Daniel Brenman, Wallace T. Tang, R. Proie
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引用次数: 11

摘要

由于在DUT附近需要高密度的电子设备和继电器,以及高带宽,宽I/O带来了严峻的挑战。已经演示了2×2mm MEMS开关,相对于典型的to -can电磁继电器,其占地面积减少了约80%。其小尺寸的另一个好处是,MEMS继电器能够工作到ka波段(40 GHz),具有热开关能力和<;±50mΩ的重复性。据我们所知,我们最新的SPDT器件保持着MEMS器件1000万次24w功率处理的当前记录。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
RF MEMS switches for Wide I/O data bus applications
Wide I/O poses serious challenges due to the requisite high density of electronics and relays near the DUT, as well as high bandwidth. A 2×2mm MEMS switch has been demonstrated, offering >80% footprint reduction relative to a typical TO-can electromagnetic relay. A further benefit of its small size, the MEMS relay is able to operate up to Ka-band (40 GHz) with hot switch capability and repeatability of <;±50mΩ. To our knowledge, our latest SPDT device holds the current record in power handling for MEMS devices of 24 W at 10 million cycles.
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