Yiyin Zhou, Huong Tran, W. Du, Jifeng Liu, G. Sun, R. Soref, J. Margetis, J. Tolle, Yong-Hang Zhang, Baohua Li, M. Mortazavi, Shui-Qing Yu
{"title":"硅单片集成中红外GeSn/SiGeSn激光器和光电探测器","authors":"Yiyin Zhou, Huong Tran, W. Du, Jifeng Liu, G. Sun, R. Soref, J. Margetis, J. Tolle, Yong-Hang Zhang, Baohua Li, M. Mortazavi, Shui-Qing Yu","doi":"10.1364/cleo_at.2020.jm2e.1","DOIUrl":null,"url":null,"abstract":"We demonstrated optically pumped GeSn lasers operating at 270 K and 3.5 μm, and photodetectors with spectral response cutoff at 3.65 μm and 300 K. Latest progress on electrically injected lasers will also be reported.","PeriodicalId":6719,"journal":{"name":"2020 Conference on Lasers and Electro-Optics (CLEO)","volume":"71 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2020-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Mid-Infrared GeSn/SiGeSn Lasers and Photodetectors Monolithically Integrated on Silicon\",\"authors\":\"Yiyin Zhou, Huong Tran, W. Du, Jifeng Liu, G. Sun, R. Soref, J. Margetis, J. Tolle, Yong-Hang Zhang, Baohua Li, M. Mortazavi, Shui-Qing Yu\",\"doi\":\"10.1364/cleo_at.2020.jm2e.1\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrated optically pumped GeSn lasers operating at 270 K and 3.5 μm, and photodetectors with spectral response cutoff at 3.65 μm and 300 K. Latest progress on electrically injected lasers will also be reported.\",\"PeriodicalId\":6719,\"journal\":{\"name\":\"2020 Conference on Lasers and Electro-Optics (CLEO)\",\"volume\":\"71 1\",\"pages\":\"1-2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 Conference on Lasers and Electro-Optics (CLEO)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1364/cleo_at.2020.jm2e.1\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 Conference on Lasers and Electro-Optics (CLEO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/cleo_at.2020.jm2e.1","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Mid-Infrared GeSn/SiGeSn Lasers and Photodetectors Monolithically Integrated on Silicon
We demonstrated optically pumped GeSn lasers operating at 270 K and 3.5 μm, and photodetectors with spectral response cutoff at 3.65 μm and 300 K. Latest progress on electrically injected lasers will also be reported.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
