多孔n-InP的形貌及光致发光性能

2017 IEEE 7th International Conference Nanomaterials: Application & Properties (NAP) Pub Date : 2017-09-01 DOI:10.1109/NAP.2017.8190154

Y. Suchikova, I. Bogdanov, S. Onishchenko, S. Vambol, V. Vambol, O. Kondratenko

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引用次数: 1

摘要

采用阳极电化学刻蚀法在衬底(100)n型InP上生长多孔InP样品。通过扫描电子显微镜(SEM)和光致发光(PL)对样品进行了表征，在PL中观察到蓝移。利用高纯氢流对样品进行热清洗，从多孔InP表面去除表面氧化物。用能量色散x射线光谱法研究了氢探针处理后多孔n-InP表面的化学成分。孔间壁的大小为3-11nm。

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Morphologies and photoluminescence properties of porous n-InP

The samples of porous InP were grown up by a method of anode electrochemical etching on a substrate (100) InP n-type. The samples were characterized by scanning electronic microscopy (SEM) and photoluminescence (PL) where a blue shift was observed in PL. To remove surface oxides from the surface of porous InP using the thermal cleaning of the samples in a stream of high purity hydrogen. Chemical composition of surface of porous n-InP after in hydrogen probed treatment the method of Energy dispersive X-ray spectroscopy. Size of walls between pores which makes 3–11nm.

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2017 IEEE 7th International Conference Nanomaterials: Application & Properties (NAP)

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