一个0.7W完全集成的42GHz功率放大器，在0.13µm SiGe BiCMOS中具有10%的PAE

2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers Pub Date : 2013-03-28 DOI:10.1109/ISSCC.2013.6487673

Wei Tai, L. Carley, D. Ricketts

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引用次数: 53

摘要

在本文中，我们报告了一种完全集成的功率放大器(PA)架构，该架构使用16路零度组合器将16个片上PA的功率组合在一起，在42GHz和9GHz的-3dB带宽下实现0.7W的输出功率和10%的功率附加效率(PAE)。这是最近报道的毫米波(mm-Wave)硅基PA输出功率的2.6倍[1]。该电路是一个完全集成的毫米波放大器，在硅工艺中实现了接近1瓦的领先输出功率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A 0.7W fully integrated 42GHz power amplifier with 10% PAE in 0.13µm SiGe BiCMOS

In this paper, we report a fully integrated power amplifier (PA) architecture that combines the power of 16 on-chip PAs using a 16-way zero-degree combiner to achieve an output power of 0.7W with a power-added efficiency (PAE) of 10% at 42GHz and a -3dB bandwidth of 9GHz. This is 2.6 times more output power than a recently reported millimeter-Wave (mm-Wave) silicon-based PA [1]. The circuit is a fully integrated mm-Wave PA achieving a leading output power approaching 1 Watt in a silicon process.

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2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers

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