半导体外差接收机用量子级联激光器

J. K. Choi, K. Wang, R. Ramaswamy, C. Deutsch, A. Muraviev, G. Strasser, A. Sergeev, V. Mitin
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引用次数: 1

摘要

最近提出的基于无序半导体异质结构的探测器与太赫兹辐射耦合良好,并且比广泛使用的肖特基二极管所需的本振(LO)功率要小得多。将这些探测器与量子级联激光器(qcl)集成在一起,用于太赫兹外差传感,对于太赫兹光谱学的许多应用是非常有前途的。在这项工作中,我们制备并表征了基于lo -声子去种群机制在GaAs/AlGaAs超晶格上生长的太赫兹qcl。所设计的qcl工作在2 ~ 3太赫兹的稳定连续波单模范围内,有效线宽为MHz。所设计的qcl在77K时的峰值功率估计为~ 30 μW, 4K时的峰值功率估计为~ 0.3 mW。可管理的光谱特性已经实现使用选择性设备和通过改变应用偏压。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Quantum Cascade Lasers for semiconductor heterodyne receiver
Recently proposed detectors based on disordered semiconductor heterostructures are well coupled to THz radiation and require substantially less power of the local oscillator (LO) than the widely used Schottky diodes. Integration of these detectors with Quantum Cascade Lasers (QCLs) for THz heterodyne sensing is very promising for numerous applications of THz spectroscopy. In this work, we have fabricated and characterized THz QCLs grown on GaAs/AlGaAs superlattice based on LO-phonon depopulation mechanism. The designed QCLs operate with a stable continuous-wave single-mode operation in the range of 2–3 THz and the effective line-width is in MHz scale. The peak power in the designed QCLs is estimated to be ∼30 μW at 77K and ∼ 0.3 mW at 4K. Manageable spectral characteristics have been achieved using selective devices and by varying the applied bias.
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