一个2db NF，全差分，可变增益，900mhz CMOS LNA

2000 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.00CH37103) Pub Date : 2000-06-15 DOI:10.1109/VLSIC.2000.852860

E. Sacchi, I. Bietti, F. Gatta, F. Svelto, R. Castello

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引用次数: 31

摘要

采用nMOS和pMOS电感退化对作为输入级，并联配置的全差分900 MHz CMOS LNA可实现以下性能:2 dB NF, 22 dB电压增益，-3 dBm IIP3, 8ma电流消耗。这个LNA的附加特性是可变增益。对封装的模具进行了测量。除了SMD电感器(用于调谐目的)外，不使用外部元件，与片上门螺旋电感器串联。

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A 2 dB NF, fully differential, variable gain, 900 MHz CMOS LNA

A fully differential 900 MHz CMOS LNA using, as input stage, nMOS and pMOS inductively degenerated pairs, in shunt configuration, achieves the following performance: 2 dB NF, 22 dB voltage gain, -3 dBm IIP3 with 8 mA current consumption. As additional feature of this LNA is a variable gain. Measurements have been performed on packaged dies. No external components are used, except for an SMD inductor (used for tuning purposes), placed in series with the on-chip gate spiral inductor.

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来源期刊

2000 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.00CH37103)

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