Zhiqiang Liu, X. Yi, Junxi Wang, I. Ferguson, N. Lu, Jinmin Li
{"title":"Mg共掺杂4d-Element (in)在GaN中高效受体电离的理论分析与实验实现","authors":"Zhiqiang Liu, X. Yi, Junxi Wang, I. Ferguson, N. Lu, Jinmin Li","doi":"10.30919/esmm5f209","DOIUrl":null,"url":null,"abstract":"1 Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Science, Beijing, 100086, China 2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China 3 Lyles School of Civil Engineering, Birck Nanotechnology Center, Sustainable Materials and Renewable Technology (SMART) Lab, Purdue University, West Lafayette, IN 47906 USA 4 Electrical and Computer Engineering, Missouri University of Science and Technology, Rolla MO 65409, USA *E-mail: lzq@semi.ac.cn 1,2* 1,2 1,2 4 3 1,2 Zhiqiang Liu, Xiaoyan Yi, Junxi Wang, Ian Ferguson, Na Lu and Jinmin Li View Article Online","PeriodicalId":11851,"journal":{"name":"ES Materials & Manufacturing","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Theoretical Analysis and Experimental Realization of Highly Effective Acceptor Ionization in GaN via Mg Co-doped with 4d-Element (In)\",\"authors\":\"Zhiqiang Liu, X. Yi, Junxi Wang, I. Ferguson, N. Lu, Jinmin Li\",\"doi\":\"10.30919/esmm5f209\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"1 Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Science, Beijing, 100086, China 2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China 3 Lyles School of Civil Engineering, Birck Nanotechnology Center, Sustainable Materials and Renewable Technology (SMART) Lab, Purdue University, West Lafayette, IN 47906 USA 4 Electrical and Computer Engineering, Missouri University of Science and Technology, Rolla MO 65409, USA *E-mail: lzq@semi.ac.cn 1,2* 1,2 1,2 4 3 1,2 Zhiqiang Liu, Xiaoyan Yi, Junxi Wang, Ian Ferguson, Na Lu and Jinmin Li View Article Online\",\"PeriodicalId\":11851,\"journal\":{\"name\":\"ES Materials & Manufacturing\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ES Materials & Manufacturing\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.30919/esmm5f209\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ES Materials & Manufacturing","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.30919/esmm5f209","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Theoretical Analysis and Experimental Realization of Highly Effective Acceptor Ionization in GaN via Mg Co-doped with 4d-Element (In)
1 Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Science, Beijing, 100086, China 2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China 3 Lyles School of Civil Engineering, Birck Nanotechnology Center, Sustainable Materials and Renewable Technology (SMART) Lab, Purdue University, West Lafayette, IN 47906 USA 4 Electrical and Computer Engineering, Missouri University of Science and Technology, Rolla MO 65409, USA *E-mail: lzq@semi.ac.cn 1,2* 1,2 1,2 4 3 1,2 Zhiqiang Liu, Xiaoyan Yi, Junxi Wang, Ian Ferguson, Na Lu and Jinmin Li View Article Online
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