45纳米CMOS SOI中λ/4反n路滤波器的编码选择性发射抑制

Hussam AlSharnrnary, C. Hill, Ahmed Hamza, J. Buckwalter
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引用次数: 7

摘要

本文演示了用四分之一波$(\ λ /4)$变压器来反转并联$N$路径滤波器的响应,以打破开关电阻和抑制之间固有的$N$路径权衡。45纳米CMOS SOI滤波器支持频率和代码选择滤波模式。该芯片在频率为0.9-1.1 GHz的I-V和1.8-V电源上消耗9.37 mW的功率,芯片面积为1.77mm2。发射抑制为21.9 dB,插入损耗为3.3 dB。带内三阶截距点(IIP3)为22.6 dBm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A λ/4-lnverted N-path Filter in 45-nm CMOS SOI for Transmit Rejection with Code Selective Filters
This paper demonstrates transmit rejection with a quarter-wave $(\lambda/4)$ transformer that inverts the response of a shunt $N$-path filter to break the inherent $N$-path trade-offs between switch resistance and rejection. A 45-nm CMOS SOI filter supports both frequency and code selective filtering modes. The chip consumes a power of 9.37 mW from I-V and 1.8-V supplies at frequency of 0.9-1.1 GHz and the chip area is 1.77mm2. The transmit rejection is 21.9 dB with 3.3 dB insertion loss. The in-band third-order-intercept point (IIP3) is 22.6 dBm.
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