通信波长硅基二维平板纳米光子晶体TM偏振器

Yonghao Cui, Qi Wu, E. Schonbrun, M. Tinker, J. Lee, W. Park
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引用次数: 3

摘要

我们报道了一种非常紧凑的(15.4 μ m x 8 μ m)硅基二维平板纳米光子晶体横向磁(TM)偏振器,它可以阻止横向电(TE)偏振光在电信波长(1,550 nm)周围的传播。TM极化的长度仅为4.9 μ m,在复杂的光子集成电路中具有很大的集成潜力。据我们所知,这是有史以来第一次在电信波长上展示硅基TM偏振器。利用二维和三维时域有限差分(FDTD)仿真方法设计了硅材料上的三角形气孔阵列。采用聚焦离子束和反应离子蚀刻技术,在绝缘体硅片上制备了这种光子晶体TM偏振片,TM偏振片的气孔直径为170 nm,间距为347 nm,输入输出波导的间距为371 nm。利用波长范围为1528 nm ~ 1604 nm的可调谐激光器对器件进行了全面表征。测量了TE和TM偏振光的透射光强,清楚地表明TE偏振光在1.55 μ m波长附近被滤除。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Silicon-based 2D slab nano photonic crystal TM polarizer in telecommunication wavelength
We report an extremely compact (15.4 mum x 8 mum) silicon-based 2D slab nano photonic crystal transverse magnetic (TM) polarizer which blocks propagation of the transverse electric (TE) polarized light around telecommunication wavelength (1,550 nm). TM polarization occurs in a length of mere 4.9 mum and it has a great potential to be integrated in a complex photonic integrated circuits. To our knowledge, this is the first ever demonstration of silicon-based TM polarizer in telecommunication wavelength. 2D and 3D finite difference time domain (FDTD) simulation was utilized to design a triangular array of air holes in silicon. Such photonic crystal TM polarizer was fabricated in silicon-on-insulator wafer using focused ion beam and reactive ion etch with air hole diameter of 170 nm and pitch distance of 347 nm for the TM polarizer and 371 nm for the input and output waveguide. The device was fully characterized using tunable lasers in the wavelength range of 1,528 nm ~ 1,604 nm. Transmitted light intensities of the TE and TM polarized lights were measured which clearly showed the TE polarized light is filtered out around 1.55 mum wavelength.
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