范德华铁电异质结构三栅极晶体管中灵活内存计算的实现

IF 4.3 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advances in Nano Research Pub Date : 2023-08-01 DOI:10.1007/s12274-023-5964-8

Xinzhu Gao, Quan Chen, Qinggang Qin, Liang Li, Meizhuang Liu, Derek Hao, Junjie Li, Jingbo Li, Zhongchang Wang, Zuxin Chen

引用次数: 3

摘要

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Realization of flexible in-memory computing in a van der Waals ferroelectric heterostructure tri-gate transistor

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来源期刊

Advances in Nano Research Physics and Astronomy-Atomic and Molecular Physics, and Optics

CiteScore

7.70

自引率

33.30%

发文量

期刊介绍： The Journal of Advances in Nano Research is an international and interdisciplinary peer reviewed journal. The journal aims to integrate high quality contributions from scientists and engineers alike into a single source of information that serves broad scientific audience. The journal publishes original full research articles, short communications for rapid print of research findings, and review articles. The Journal will also print special reports that feature recent discoveries with potential impact or commentary on a state-of-the-art contribution reported in the scientific literature. The journal anticipates contributions in the synthesis, fabrication, characterization and applications of nanomaterials and nanosystems, molecular simulations and nano-x (nanophysics, nanochemistry, nanotubes, nanobiotechnology, nanomedicine, nanoptics, nanoelectronics, nanomachines/nanodevices, nanocatalysis, nanocomposites, nanomechanics/nanofluidics, etc.)