超多层AlGaAs/GaAs晶格活性区域辐射器

Физика и техника полупроводников Pub Date : 2023-01-01 DOI:10.21883/ftp.2023.05.56197.17k

А.С. Дашков, Л. Г. Герчиков, Л. И. Горай, Н.А. Костромин, А. Д. Буравлёв

{"title":"超多层AlGaAs/GaAs晶格活性区域辐射器","authors":"А.С. Дашков, Л. Г. Герчиков, Л. И. Горай, Н.А. Костромин, А. Д. Буравлёв","doi":"10.21883/ftp.2023.05.56197.17k","DOIUrl":null,"url":null,"abstract":"In this article, several designs of the active region of the THz radiation source are considered, taking into account grown super-multiperiod AlGaAs/GaAs superlattices. For the proposed designs, the principal device characteristics are computed: energy band diagram, gain spectrum, and transport characteristics. Based on the calculation results, the authors proposed an optimal design of the active region of a tunable THz radiation source.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"87 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Терагерцовые излучатели с активной областью на основе сверхмногопериодных решеток AlGaAs/GaAs\",\"authors\":\"А.С. Дашков, Л. Г. Герчиков, Л. И. Горай, Н.А. Костромин, А. Д. Буравлёв\",\"doi\":\"10.21883/ftp.2023.05.56197.17k\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this article, several designs of the active region of the THz radiation source are considered, taking into account grown super-multiperiod AlGaAs/GaAs superlattices. For the proposed designs, the principal device characteristics are computed: energy band diagram, gain spectrum, and transport characteristics. Based on the calculation results, the authors proposed an optimal design of the active region of a tunable THz radiation source.\",\"PeriodicalId\":24054,\"journal\":{\"name\":\"Физика и техника полупроводников\",\"volume\":\"87 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Физика и техника полупроводников\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.21883/ftp.2023.05.56197.17k\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Физика и техника полупроводников","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.21883/ftp.2023.05.56197.17k","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

在本文中，考虑到生长的超多周期AlGaAs/GaAs超晶格，考虑了几种太赫兹辐射源有源区的设计。对于所提出的设计，计算了主要器件特性:能带图、增益谱和传输特性。根据计算结果，提出了可调谐太赫兹辐射源有源区域的优化设计方案。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Терагерцовые излучатели с активной областью на основе сверхмногопериодных решеток AlGaAs/GaAs

In this article, several designs of the active region of the THz radiation source are considered, taking into account grown super-multiperiod AlGaAs/GaAs superlattices. For the proposed designs, the principal device characteristics are computed: energy band diagram, gain spectrum, and transport characteristics. Based on the calculation results, the authors proposed an optimal design of the active region of a tunable THz radiation source.

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