C. Calò, K. Merghem, R. Rosales, É. Galopin, O. Moustapha, A. Lemaître, I. Krestnikov, G. Bouwmans, A. Martinez, A. Ramdane
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引用次数: 1
摘要
报道了单节fabry - p InAs/GaAs边缘发射量子点激光器在1.3 μm处产生脉冲。研究了器件的锁模性能与注入电流和光谱形状的关系。
Optical pulse generation from single-section InAs/GaAs quantum dot edge-emitting lasers
Pulse generation from single-section Fabry-Pérot InAs/GaAs edge-emitting quantum dot lasers is reported at 1.3 μm. Mode-locking performances of the devices are studied as function of injection current and optical spectrum shape.
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