位错对锗低温导热系数的影响(物理)

K. Sumino, Shoichi Kodaka, K. Kojima
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引用次数: 24

摘要

在1.5 ~ 30k的温度范围内,测量了变形锗单晶的导热系数与温度的关系。在Callaway模型的基础上对结果进行了分析。克莱门斯关于位错静态应变场引起声子散射的理论很好地解释了实验结果。在变形到阶段1和阶段2的试样中,由热导率数据推断出的位错密度比直接观察得到的位错密度大,其因子分别小于3.7和2.1。在20 K左右和2.2 K以下的温度下,理论曲线与实验曲线存在差异。前者可以通过假设在变形过程中引入点缺陷样缺陷来解释,而后者可以归因于位于位错核心的悬垂电子引起的声子散射。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of Dislocations on the Low Temperature Thermal Conductivity in Germanium(Physics)
The thermal conductivity vs temperature relation in deformed germanium single crystals is measured in the temperature range from 1.5 to 30 K. The results are analysed on the basis of the Callaway model. Klemens' theory on the scattering of phonons due to the static strain field of dislocations accounts for the experimental results reasonably well. The dislocation densities deduced from the thermal conductivity data are greater than those counted by direct observation of dislocations by factors less than 3.7 and 2.1 in specimens deformed to stage I and stage II, respectively. Discrepancies between the theoretical curves and the experimental curves are found at temperatures around 20 K and below 2.2 K. The former is accounted for by assuming that point-defect like imperfections have been introduced into specimens during deformation, while the latter could be attributed to the scattering of phonons due to dangling electrons located at the dislocation core.
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