InGaAs/AlGaAs超晶格中形成的微带的超高分辨率直接观测

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) Pub Date : 2013-06-16 DOI:10.1109/PVSC.2013.6744154

D. Shimura, F. Ichihashi, K. Nishitani, S. Harada, M. Kuwahara, T. Ito, M. Matsunami, S. Kimura, T. Sakai, M. Tagawa, T. Ujihara

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引用次数: 1

摘要

在超晶格结构中形成的微带常用于中波段太阳能电池。为了设计一个优化的结构，测量影响输运性质和太阳能转换效率的小波段色散是很重要的。在这项研究中，我们用同步辐射光的角度分辨光谱学直接观察了InGaAs/AlGaAs量子阱超晶格中形成的微带的色散。由于x谷周围的小带导致了短周期的能量色散。此外，每个小波段的有效质量系数可以单独评估。

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Ultrahigh-resolution direct observation of mini-bands formed in InGaAs/AlGaAs superlattice

Mini-bands formed in superlattice structures are often used for an intermediate-band solar cell. In order to design an optimized structure, it is important to measure the mini-band dispersions which influence transport properties and solar-energy conversion efficiency. In this study, we directly observed the dispersions of mini-bands formed in InGaAs/AlGaAs quantum-well superlattices by angle-resolved photoemission spectroscopy with synchrotron radiation light. The short-period energy dispersions due to the mini-bands around the X-valley were clearly obtained. In addition, the effective mass coefficient of each mini-band could be individually evaluated.

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2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)

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