含氧空位的BaPrO3-δ薄膜的结构和电学性能

Transactions-Materials Research Society of Japan Pub Date : 2017-04-01 DOI:10.14723/TMRSJ.42.15

Shoto Furuichi, T. Tsuchiya, K. Horiba, Masaki Kobayashi, M. Minohara, H. Kumigashira, T. Higuchi

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古一正人1)，土屋隆2)，堀bakoji 3)，小林正明3)，minohara Makoto 3)， kumigashirahiroshi 3)， higuchi Tohru 1) 1)，东京理科大学应用物理系，东京125-8585;2)国际材料纳米结构中心，国立材料科学研究所(NIMS)，日本，茨城305 -0044;3)光子工厂，日本，茨城305 -0801;传真:81-3-5876-1401，电子邮件:1516628@ed.tus.ac.jp

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Structural and Electrical Properties of BaPrO3-δ Thin Film with Oxygen Vacancies

Shoto Furuichi1), Takashi Tsuchiya2), Koji Horiba3), Masaki Kobayashi3), Makoto Minohara3), Hiroshi Kumigashira3) and Tohru Higuchi1) 1) Department of Applied Physics, Tokyo University of Science, Katsushika, Tokyo 125-8585, Japan 2) International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan 3) Photon Factory, KEK, Tsukuba, Ibaraki 305-0801, Japan Fax: 81-3-5876-1401, e-mail: 1516628@ed.tus.ac.jp

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Transactions-Materials Research Society of Japan

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