F. Cappelluti, A. Cédola, Arastoo Khalili, F. Elsehrawy, G. Bauhuis, P. Mulder, J. Schermer, G. Bissels, T. Aho, T. Niemi, M. Guina, Dongyoung Kim, Jiang Wu, Huiyun Liu
{"title":"通过外延提升和光管理实现高效率的InAs/GaAs量子点太阳能电池","authors":"F. Cappelluti, A. Cédola, Arastoo Khalili, F. Elsehrawy, G. Bauhuis, P. Mulder, J. Schermer, G. Bissels, T. Aho, T. Niemi, M. Guina, Dongyoung Kim, Jiang Wu, Huiyun Liu","doi":"10.1109/PVSC.2017.8366631","DOIUrl":null,"url":null,"abstract":"We report thin-film InAs/GaAs QD solar cells fabricated by epitaxial lift-off of 3-inch wafers containing QD epi-structures with high in-plane QD density. External quantum efficiency measurements demonstrate enhanced QD harvesting in the thin-film configuration. Numerical simulations show that remarkably high increase of the QD photocurrent may be achieved by replacing the planar rear mirror with micro-structured photonic gratings. Measurements of diffraction efficiency of grating prototypes realized on GaAs wafers by nanoimprint lithography are presented.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":"1 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Enabling High-Efficiency InAs/GaAs Quantum Dot Solar Cells by Epitaxial Lift-Off and Light Management\",\"authors\":\"F. Cappelluti, A. Cédola, Arastoo Khalili, F. Elsehrawy, G. Bauhuis, P. Mulder, J. Schermer, G. Bissels, T. Aho, T. Niemi, M. Guina, Dongyoung Kim, Jiang Wu, Huiyun Liu\",\"doi\":\"10.1109/PVSC.2017.8366631\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report thin-film InAs/GaAs QD solar cells fabricated by epitaxial lift-off of 3-inch wafers containing QD epi-structures with high in-plane QD density. External quantum efficiency measurements demonstrate enhanced QD harvesting in the thin-film configuration. Numerical simulations show that remarkably high increase of the QD photocurrent may be achieved by replacing the planar rear mirror with micro-structured photonic gratings. Measurements of diffraction efficiency of grating prototypes realized on GaAs wafers by nanoimprint lithography are presented.\",\"PeriodicalId\":6318,\"journal\":{\"name\":\"2012 38th IEEE Photovoltaic Specialists Conference\",\"volume\":\"1 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 38th IEEE Photovoltaic Specialists Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.2017.8366631\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 38th IEEE Photovoltaic Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2017.8366631","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Enabling High-Efficiency InAs/GaAs Quantum Dot Solar Cells by Epitaxial Lift-Off and Light Management
We report thin-film InAs/GaAs QD solar cells fabricated by epitaxial lift-off of 3-inch wafers containing QD epi-structures with high in-plane QD density. External quantum efficiency measurements demonstrate enhanced QD harvesting in the thin-film configuration. Numerical simulations show that remarkably high increase of the QD photocurrent may be achieved by replacing the planar rear mirror with micro-structured photonic gratings. Measurements of diffraction efficiency of grating prototypes realized on GaAs wafers by nanoimprint lithography are presented.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
