具有超薄银层的ZnO/Ag/石墨烯透明导电氧化膜

IF 1.4 4区 工程技术
Fang Fang, Junsheng Wu, Caibo Yan, Yanwen Zhou, Zhuo Zhao
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引用次数: 1

摘要

我们在氧化锌(ZnO)和双层结构的石墨烯薄膜之间插入银(Ag)层,形成三层透明导电氧化膜,由于银层提供了传输自由电子的桥梁,其导电性得到了改善。为了构建三层ZnO/Ag/石墨烯透明导电薄膜,在固体Ag和粉末ZnO靶材上通过磁控溅射将Ag和ZnO层依次沉积在石墨烯/玻璃基板上。结果表明:加入分散的银点后,三层膜中的电子浓度增加了一个数量级,达到1021 cm−3;加入相对连续的10.5 nm厚的银层后,三层膜中的电子浓度增加了三个数量级,达到1023 cm−3。然而,电子迁移率从10−1急剧下降到10−2 cm2 V−1 s−1,这是因为薄银层上分散的银点形成了狭窄的桥,限制了电子的传递。连续10.5 nm厚的银层不仅作为宽桥,而且提供电子;因此,ZnO/Ag(连续)/石墨烯三层薄膜的电阻率显著降低,而三层薄膜的迁移率保持与连续Ag层相同的数量级。当然,加入银层后,三层膜的透明度略有下降。为了制造前沿电极,必须建立ZnO/Ag/石墨烯多层结构以形成透明导电氧化膜。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
ZnO/Ag/graphene transparent conductive oxide film with ultrathin Ag layer
We insert a silver (Ag) layer between zinc oxide (ZnO) and graphene films of a bilayer structure to create trilayer transparent conductive oxide films with improved conductivities due to the bridge provided by the Ag layer to transport free electrons. To construct trilayer ZnO/Ag/graphene transparent conductive films, the Ag and ZnO layers are deposited successively on a graphene/glass substrate by magnetron sputtering from solid Ag and powder ZnO targets. The results show that the electron concentration in the trilayer films increases one order of magnitude to 1021 cm−3 upon inserting dispersed Ag dots and three orders of magnitude to 1023 cm−3 upon adding a relatively continuous 10.5-nm-thick Ag layer. However, the electron mobility drops dramatically from 10−1 to 10−2 cm2 V−1 s−1 because the dispersed Ag dots of a thin Ag layer form narrow bridges, which limit electron transport. The continuous 10.5-nm-thick Ag layer not only acts as a wide bridge but also provides electrons; therefore, the resistivity of the ZnO/Ag(continuous)/graphene trilayer decreases significantly, while the mobility of the trilayer film remains of the same order of magnitude as that of the continuous Ag layer. Of course, the transparency of the trilayer film decreases slightly upon inserting the Ag layer. To create frontier electrodes, the ZnO/Ag/graphene multilayer structure must be built up to form transparent conductive oxide films.
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来源期刊
Journal of Vacuum Science & Technology B
Journal of Vacuum Science & Technology B 工程技术-工程:电子与电气
自引率
14.30%
发文量
0
审稿时长
2.5 months
期刊介绍: Journal of Vacuum Science & Technology B emphasizes processing, measurement and phenomena associated with micrometer and nanometer structures and devices. Processing may include vacuum processing, plasma processing and microlithography among others, while measurement refers to a wide range of materials and device characterization methods for understanding the physics and chemistry of submicron and nanometer structures and devices.
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