用于脉冲辐射分解的两个快速光电二极管

G.G. Teather, N.V. Klassen, H.A. Gillis
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引用次数: 8

摘要

本文描述了两个光电二极管的特性,这些特性使它们在脉冲辐射分解研究中非常有用。这些探测器是EG &gshs -100 Si光电二极管和巴恩斯室温A-100 InAs光电二极管。前者具有至少6.5 mA的线性输出,0-98%的响应时间≌15 ns,与之前描述的硅光电二极管不同,其响应没有可检测到的慢速成分。A-100光电二极管及其电路的0-98%响应时间约为60 ns,也没有可检测到的慢响应成分。A-100的输出至少为2 mA线性,我们已将其用于450至3200 nm之间的吸收测量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Two fast photodiodes for use in pulse radiolysis

In this paper we describe the characteristics of two photodiodes which make them very useful for pulse radiolysis studies. These detectors are the EG & G SHS-100 Si photodiode and the Barnes room temperature A-100 InAs photodiode. The former has a linear output up to at least 6·5 mA, has a 0–98% response time ≌ 15 ns and is distinguished from Si photodiodes previously described by having no detectable slow component to its response. The 0–98% response time of the A-100 photodiode and the circuit developed for it is about 60 ns, and it also shows no detectable slow response component. The output of the A-100 is linear up to at least 2 mA, and we have used it for absorption measurements between 450 and 3200 nm.

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