1625nm l波段DFB激光二极管，功率超过100mw

LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242) Pub Date : 2001-11-12 DOI:10.1109/LEOS.2001.969058

T. Kise, K. Hiraiwa, S. Koizumi, N. Yamanaka, M. Funabashi, A. Kasukawa

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引用次数: 2

摘要

只提供摘要形式。我们演示了高功率l波段DFB激光二极管，即使在1625nm波长下，输出功率也超过100mW。为了抑制温度特性的进一步退化，我们调整了载流子约束条件，保持了较高的斜率效率。我们还研究了阈值电流的特征温度在C波段和l波段波长区域的波长依赖性。制备的激光器的有源区由应变补偿的InGaAsP MQW-SCH组成。

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Over 100 mW high power operation of 1625 nm L-band DFB laser diodes

Summary form only given. We demonstrate high power L-band DFB laser diodes with an output power over 100mW even at the wavelength of 1625nm. To suppress further degradation of temperature characteristics, we adjust carrier confinement conditions, still keeping high slope efficiency. We also investigate wavelength dependence of characteristic temperature of threshold current over C- and L-band wavelength region. The active region of the fabricated laser is composed of a strain-compensated InGaAsP MQW-SCH.

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来源期刊

LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)

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