真空热处理对Sb2S3薄膜结构和光学性能的影响

N. Țigău, S. Condurache-Bota
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引用次数: 2

摘要

本文研究了热退火对三硫化锑(Sb2S3)薄膜结构和光学性能的影响。将Sb2S3薄膜在500 K真空中退火1 h。用透射电子显微镜(TEM)研究了它们的结构性质。TEM分析表明,沉积的Sb2S3薄膜为非晶结构,退火处理后为多晶结构。通过对实验记录的500 ~ 1400 nm波长范围内的光谱透射数据的分析,得到了Sb2S3薄膜的折射率n和吸收系数α。根据吸收系数对光子能量的依赖性,计算了沉积态和退火态Sb2S3薄膜的光学带隙能量Eg。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of thermal annealing in vacuum on the structural and optical properties of Sb2S3 thin films
In this work, the effect of the thermal annealing on the structural and optical properties of antimony trisulfide (Sb2S3) thin films deposited by thermal evaporation onto glass substrates held at 293 K was studied. Sb2S3 thin films were annealed at 500 K for 1 h in vacuum. Their structural properties have studied by transmission electron microscopy (TEM). The TEM analysis showed that the as-deposited Sb2S3 thin films have been an amorphous structure, while after annealing treatment, they become polycrystalline in structure. The optical constants of Sb2S3 thin films as refractive index, n, and absorption coefficient, α, were obtained from the analysis of the experimental recorded spectral transmission data over the wavelength range of 500-1400 nm. From the photon energy dependence of absorption coefficient, the optical band gap energy, Eg, was calculated for both the as-deposited and annealed Sb2S3 thin films.
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