退火对ZnO/Cu/ZnO多层结构性能的影响

Procedia Chemistry Pub Date : 2016-01-01 DOI:10.1016/j.proche.2016.03.011

Hiba S. Rasheed , Naser M. Ahmed , M.Z. Matjafri , Fayroz A. Sabah , Hamzah N. Al-Rawi

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引用次数: 4

摘要

研究ZnO / Cu / ZnO多层薄膜叠层采用Cu薄膜作为夹心层，以提高透明导电薄膜的整体性能、结构性能、电学性能和光学性能。室温下用直流和射频磁控溅射技术制备ZnO / Cu / ZnO多层薄膜。结果表明，ZnO / Cu / ZnO多层膜具有良好的结晶性能。随着Cu层厚度的增加，多层膜的可见光透过率降低，电性能显著提高。在Cu层厚度为20 nm时，ZnO / Cu / ZnO多层薄膜的光电集成性能最佳

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The Effect of the Annealing on the Properties of ZnO/Cu/ZnO Multilayer Structures

Study of ZnO / Cu / ZnO multilayer film stack using Cu film as a sandwich layer, in order to improve the overall performance of the transparent conductive film, structural, electrical and optical properties. ZnO / Cu / ZnO multilayer films prepared at room temperature by a DC and RF magnetron sputtering technique. The results showed that ZnO / Cu / ZnO multilayer film has good crystalline properties. With an increasing Cu layer thickness, a visible light transmittance of the multilayer film is reduced, while the electrical performance improved significantly. In the Cu layer thickness of 20 nm, ZnO / Cu / ZnO multilayer film optoelectronic integrated for optimal performance

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Procedia Chemistry

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