饱和温度下TiBe2的电阻率和CESR线宽

D. Shaltiel, M. Reshotko, A. Grayevsky, J. Burger, J. Daou, P. Vajda
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引用次数: 1

摘要

TiBe2的电阻率在高温下表现出异常行为,其斜率(d rho /dT)明显减小;作者用s-(或p-)类态和d-类态的解耦来解释这一点,并表明相应的s-d散射电阻率rho sd在300 K以上趋于饱和。导电电子自旋共振线宽,这主要是由于电子晶格弛豫,预计会像电阻率一样变化,事实上,他们观察到它在大约=200 K以上的急剧饱和,表明它更可能与rho sd(或rho dd)有关,而不是与全局电阻率有关;如果残余电阻率增加,饱和变得不那么尖锐,表明可能是s型电子通过局部缺陷与晶格的强耦合。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Saturation with temperature of the electrical resistivity and the CESR linewidth in TiBe2
The electrical resistivity of TiBe2 shows anomalous behaviour at high temperature characterised by a strong reduction of the slope (d rho /dT); the authors interpret this in terms of a decoupling of the s- (or p-) like and d-like states and show that the corresponding s-d scattering resistivity rho sd tends to saturate above 300 K. The conduction electron spin resonance linewidth, which is due mainly to electron-lattice relaxation, is expected to vary like the resistivity and indeed they observe a sharp saturation of it above approximately=200 K indicating that it is more likely related to rho sd(or rho dd) rather than to the global resistivity; the saturation becomes less sharp if the residual resistivity increases, indicating a strong coupling, probably of the s-like electrons with the lattice via the local defects.
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