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错配In/sub x/Ga/sub 1-x/As/InP异质结构的正交畸变

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147468
B. R. Bennett, J. D. del Alamo
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引用次数: 0

摘要

薄的，不匹配的脱毛层四方扭曲形成相干界面。在临界厚度之外，错配位错解除了应变。位错形成不对称的模式
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Orthorhombic distortion of mismatched In/sub x/Ga/sub 1-x/As/InP heterostructures
Thin, mismatched epilayers tetragonally distort to form coherent interfaces. Beyond the critical thickness, misfit dislocations relieve strain. The dislocations form in an asymmetric pattern on
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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials
[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials
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