生物模板和中性束刻蚀工艺制备的蚀刻量子纳米片的光致发光

D. Ohori, K. Kondo, K. Sakai, A. Higo, C. Thomas, S. Samukawa, T. Ikari, A. Fukuyama
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引用次数: 0

摘要

量子点激光二极管有望在新型高速信息通信器件中取代传统的半导体激光二极管。我们成功地利用生物模板和中性光束蚀刻技术制备了圆盘状量子点。与传统的等离子体工艺相比,我们独创的自顶向下工艺在蚀刻过程中实现了无缺陷和高密度的点。因此,我们试图在没有后处理的情况下检测蚀刻样品中量子纳米盘(QNDs)中量子能级的发射。我们在蚀刻(as-etched)和再生后制备了4层GaAs/AlGaAs层QNDs样品。采用光致发光(PL)方法对qnd样品进行了研究。结果表明,在GaAs和AlGaAs的带隙之间出现了宽峰。我们将实验结果与理论估计的能量进行了比较,并使用了不同直径量子点的nextnano 3D模拟器。对于这两种类型的样品,我们发现QND直径从上到下增加。从PL测量中,我们观察到使用我们自己的原始自上而下工艺制造的蚀刻样品的量子点发射。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Photoluminescence emission from as-etched quantum nanodisks fabricated by bio-template and neutral beam etching process
Quantum dot laser diodes are expected to replace conventional semiconductor laser diodes in new high-speed information and communication devices. We successfully fabricated disk-shaped quantum dots using a bio-template and neutral beam etching. Our original top-down process achieved defect-less and a high density of dots from etching process compared with conventional plasma processes. Therefore, we attempted to detect emission from the quantum energy levels in the quantum nanodisks (QNDs) for as-etched sample without post-fabrication process. We prepared 4-stacked GaAs/AlGaAs layer QNDs samples after etching (as-etched) and after regrowth. QNDs samples were investigated by photoluminescence (PL) measurements. Results showed some broad peaks appearing between the bandgaps of GaAs and AlGaAs. We compared our experimental results with energies theoretically estimated energies using a nextnano 3D simulator with QND different diameters. For both type of samples, we found that QND diameters increased from top to bottom. From PL measurement, we observed emission from QNDs for as-etched samples fabricated using our own original top-down process.
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